极紫外光刻材料研究进展  

Recent progress of extreme ultraviolet resists

作　　者：耿永友[1] 邓常猛[1] 吴谊群[1] 

机构地区：[1]中国科学院上海光学精密机械研究所中国科学院强激光材料重点实验室,上海201800

出　　处：《红外与激光工程》2014年第6期1850-1856,共7页Infrared and Laser Engineering

基　　金：上海光源中国科学院大科学装置开放研究项目(自组装技术与超高密度纳米阵列研究)

摘　　要：极紫外光刻是微电子领域有望用于下一代线宽为22nm及以下节点的商用投影光刻技术,光刻材料的性能与工艺是其关键技术之一。为我国开展极紫外光刻材料研究提供参考,综述了最近几年来文献报道的研究成果,介绍了极紫外光刻技术发展历程、现状、光刻特点及对光刻材料的基本要求,总结了极紫外光刻材料的研究领域和具体分类,着重阐述了主要光刻材料的组成、光刻原理,光刻性能所达到的水平和存在的主要问题,最后探讨了极紫外光刻材料未来的主要研究方向。Extreme ultraviolet Lithography （EUVL） has been considered as the strong candidate for next generation commercial projection lithography to print sub-22 nm half-pitch （HP） features in microelectronics field. Performance and technology of resists is one of the key parts of EUVL. In order to improve the research work in China, recent progress of EUV resists reported in near years was reviewed. The history and current status of EUVL were introduced. EUVL＇ features and targets on resists were presented. EUV resist research portfolio and its classification were summarized. Composition, mechanism and performances for EUVL of representative resists were focused. Performance possibility and problems of the different resists were also analyzed; Routes in the future to improve EUVL performances for them were finally discussed.

关 键 词：极紫外光刻 极紫外光刻材料 极紫外光刻性能 

分 类 号：TN305.7[电子电信—物理电子学]