金属在半导体表面上的吸附  

Adsorption of Metals on Semiconductor surfaces

作　　者：谢希德[1] 资剑[1] 

机构地区：[1]复旦大学物理系,上海200433

出　　处：《物理》1992年第11期641-646,共6页Physics

摘　　要：对近年来金属在半导体表面上吸附的理论和实验进展进行了评论．着重讨论了亚单层覆盖体系申存在的争议之处及最新进展．贵金属在Ｓｉ（１１１）表面上的吸附，情况相当复杂．例如对 Ａｇ／Ｓｉ（１１１），虽然理论和实验上提出了许多横型，但目前还存在许多争仪，尚没有定论．还讨论了碱金属和稀土金属在引表面上的吸附．对Ｋ在Ｓｉ（１００）表面及Ｋ和Ｏ在Ｓｉ（１００）表面上的共吸附模型进行了详细讨论．另外，对碱金属在ＧａＡｓ表面上的吸附的一些最新的结果进行了讨论．In the present,paper, recent theoretical and experimental works on the adsorption of metals on semiconductor surfaces are briefly reviewed. Emphasis is placed on the recent developments and controversies of some of the monolayer adsorbed systems. For example, for noble metals on Si(111) surface, the situation is quite complex. Many models have been proposed based on theoretical and experimental investigations of Ag/Si(111). Howe-ver, there still exist many controversies and no final conclusions have yet been achieved. The adsorption of alkali metals and rare-earth metals on Si surface is also discussed. More detailed discussions are devoted to the adsorption of K on Si (100) and coadsorption of K and O on Si(100). In addition. Some new results published in literature of the adsorption of alkali metals on GaAs surface are briefly reviewed.

关 键 词：半导体-金属 界面 吸附 硅 砷化镓 

分 类 号：O472.1[理学—半导体物理]