紫外探测器用CdS晶片制备工艺研究  

Study on Preparation of Cadmium Sulfide for Ultraviolet Detector

作　　者：黄江平[1] 何雯瑾[1] 袁俊[1] 王羽[1] 李玉英[1] 杨登全[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2014年第6期446-450,456,共6页Infrared Technology

摘　　要：介绍了叠层紫外/红外双色探测器结构特点、工作原理及选择CdS晶体材料制作紫外探测器光敏元的理论依据。阐述了CdS晶片制备及表面抛光质量的重要性和必要性。针对磨抛工艺对CdS紫外探测器性能的影响进行了研究。对比了几种抛光液对晶片表面的抛光效果,并进行了扫描电镜、红外透过率和表面粗糙度分析,得到了抛光后晶片表面的扫描电子显微镜(SEM)照片和CdS晶片厚度与红外透过率的关系曲线及CdS晶片厚度与振动噪声的关系。通过理论和实践的结合,确定了最佳抛光材料及最佳晶片厚度,研制出了完全能满足紫外探测器工艺要求的CdS探测器晶片。This paper introduces the UV/IR detector structure characteristics, working principle, the theory basis of selecting cadmium sulfide for UV detector. The importance and necessity of selecting cadmium surface polishing quality were presented. The emphasis on the fabrication technology of CdS wafer of the mechanical lapping and polishing was described in details. The best polishing liquid and thickness of the CdS was achieved by comparing and analyzing the surface of wafers SEM photos, infrared transmission and roughness, which were lapped and polished by several polishing liquid.

关 键 词：紫外探测器 CdS晶片 抛光 红外透过率 表面粗糙度 

分 类 号：TN23[电子电信—物理电子学]