Si衬底上生长的铁硅化合物结构和取向分析  

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

作　　者：李旭[1,2] 邹志强[1,2] 刘晓勇[1] 李威[1] 

机构地区：[1]上海交通大学分析测试中心,上海200240 [2]上海交通大学微纳科学技术研究院,上海200240

出　　处：《物理化学学报》2014年第7期1370-1376,共7页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(61176017);上海市教育委员会科研创新项目(12ZZ025)资助~~

摘　　要：采用分子束外延法分别在650-920℃的Si(110)和920℃的Si(111)衬底表面生长出铁的硅化物纳米结构,并主要分析了920℃高温下纳米结构的形貌、组成相及其与Si衬底的取向关系.扫描隧道显微镜(STM)研究表明,920℃高温下,Si(110)衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650℃低温下外延生长的纳米线尺寸;Si(111)衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm.电子背散射衍射研究表明920℃高温下Si(110)衬底上生长的纳米线仅以β-FeSi2的形式存在,且β-FeSi2相与衬底之间存在唯一的取向关系:β-FeSi2(101)//Si(11 1);β-FeSi2[010]//Si[110];Si(111)衬底上生长的三维岛由六方晶系的Fe2Si相组成,Fe2Si属于164空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe2Si(001)∥Si(111)和Fe2Si[1 20]//Si[112].Iron silicides were grown on Si（110） and Si（111） substrates by the molecular beam epitaxy method at 650-920 ℃ and 920 ℃, respectively. Scanning tunneling microscopy observation showed that only nanowires （NWs） formed on Si（110）, and the dimensions of the NWs increased with increasing growth temperature. The sizes of the NWs grown at 920 ℃ reached^80 nm high,-250 nm wide, and severalμm long, and were much larger than NWs grown at 650 ℃, indicating that high temperature was favorable for NW growth. Electron backscatter diffraction characterization identified that the crystal structure of the NWs grown at 920 ℃ wasβ-FeSi2 with a single orientation ofβ-FeSi2（101）//Si（11 1））,β-FeSi2[010]//Si[110]. Iron silicides grown on Si（111） at 920 ℃ formed three-dimensional （3D） islands and ultra-thin films. The 3D islands were identified as the Fe2Si phase with hexagonal crystal structure and space group 164, and the cellconstants at room temperature were a=0.405 nm and c=0.509 nm. The orientation relationship between the Fe2Si phase and the Si（111） substrate was Fe2Si（001）//Si（111）, Fe2Si[1 20]//Si[112].

关 键 词：扫描隧道显微镜 电子背散射衍射 铁的硅化物 纳米线 三维岛 结构 取向关系 

分 类 号：O613.72[理学—无机化学]