90nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理  

Mechanism of multiple bit upsets induced by localized latch-up effect in 90 nm complementary metal semiconductor static random–access memory

作　　者：陈睿[1,2] 余永涛[1,2] 上官士鹏[1] 封国强[1] 韩建伟[1] 

机构地区：[1]中国科学院国家空间科学中心,北京100190 [2]中国科学院大学,北京100049

出　　处：《物理学报》2014年第12期408-413,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:41304148);中国科学院知识创新工程青年基金(批准号:O82111A17S)资助的课题~~

摘　　要：基于单粒子效应脉冲激光实验装置,开展了90 nm互补金属氧化物半导体静态随机存储器的单粒子翻转和闩锁效应实验,并给出了器件单粒子翻转效应位图.实验发现,器件出现了大量的多位翻转和约20 mA的电源电流脉冲.借助器件仿真工具,揭示了器件发生单粒子多位翻转效应的原因.结果表明,器件局部阵列发生单粒子闩锁效应并传播到多个位单元是诱发多位翻转的主要原因.通过对比分析脉冲激光和器件仿真实验结果,发现P/N阱电势塌陷是导致90 nm互补金属氧化物半导体静态随机存储器出现单粒子闩锁传播效应的内在物理机制.By using the pulsed laser single effect facility, the single event upset and latch-up phenomenon are studied, and the bitmap of 90 nm complementary metal oxide semiconductor （CMOS） static random-access memory （SRAM） is mapped. It is shown that many multiple bit upsets occur and pulsed supply current of 20 mA amplitude is monitored. Based on the technology computer aided design （TCAD）, it is found that the localized latch-up in CMOS SRAM is the main reason for the single event multiple bit upsets. Finally, by analyzing the results of the pulsed laser experiment and TCAD, it is found that the P/N well potential collapse is the key physical mechanism responsible for the spreading of the single event latch-up effect in 90 nm CMOS SRAM.

关 键 词：单粒子闩锁效应 器件仿真 多位翻转 脉冲激光 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]