射频磁控溅射法沉积非晶InGaZnO薄膜及真空退火对其性能的影响  

Annealing Effects on Properties of Amorphous InGaZnO Thin Films by Radio Frequency Magnetron Sputtering Method

作　　者：江凯[1] 李远洁[1] 

机构地区：[1]西安交通大学电子与信息工程学院,西安710049

出　　处：《半导体光电》2014年第3期464-467,473,共5页Semiconductor Optoelectronics

基　　金：教育部留学回国人员科研启动基金项目(10回国基金11);中央高等学校基本科研业务经费项目(XJJ2013087)

摘　　要：采用RF磁控溅射法在石英玻璃上制备了InGaZnO薄膜,并对薄膜进行了真空退火实验,探讨了沉积过程中氧气流量及真空退火温度对薄膜的光学性质和电学性质的影响及其机理。测试结果表明薄膜的光透过率随氧气流的增加而增大,且当氧气流大于1cm3/min时,薄膜呈现出不导电性,在通入的氧气流为0.5cm3/min时迁移率达11.9cm2/(V·s)。经过真空退火后,氧气流小于1.5cm3/min时薄膜载流子浓度随退火温度的变化而变化;氧气流大于1.5cm3/min时样品由半绝缘性转变为半导电性。生长样品和退火样品均为n型半导体。Amorphous InGaZnO films were deposited on quartz glass by radio frequency magnetron sputtering method and then annealed in vacuum,the influences of oxygen flow and annealing temperature on the properties of the InGaZnO films were systematically investigated.It is shown the average optical transmittance of the as-grown films increases with the oxygen flow,when the oxygen flow is higher than 1cm3/min,the films are semi-insulating,and the Hall mobility of the films deposited at 0.5cm3/min oxygen flow exhibits 11.9cm2/V.After being annealed in vacuum,the carrier density of the films that deposited with the oxygen flow below 1.5cm3/min varies with the annealing temperature.The films that deposited with the oxygen flow over 1.5cm3/min converts to semiconductor under the annealing temperature above 400 celsius degree.Both the as-grown and annealed InGaZnO films show n-type electrical conductivity.

关 键 词：RF磁控溅射 InGaZnO薄膜 光学性质 电学性质 退火 氧空位 

分 类 号：O472[理学—半导体物理]