V_2O_5/V/V_2O_5复合膜的制备及其光电性能研究  

Preparation of V_2O_5/V/V_2O_5 trilayer thin film and its photoelectric performance

作　　者：颜毓雷 李合琴[1] 乔恺 张学科[1] 周矗[1] 陶磊[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2014年第6期670-673,709,共5页Journal of Hefei University of Technology：Natural Science

摘　　要：文章采用直流磁控溅射法在玻璃衬底上制备了V2 O5/V/V2 O5复合膜，通过改变中间层钒的溅射时间，制备了3组薄膜。所有薄膜均在450℃空气气氛中退火60 min。用四探针测试仪测试了薄膜的电学性能，用X射线衍射仪对薄膜的结构组分进行分析。实验结果表明，当V层溅射时间为25 min时，经450℃退火后的薄膜方块电阻为38．5 kΩ，电阻温度系数为-0．0218 K -1，在700～1400 nm波段红外吸光度均在0．6以上，符合非致冷微测辐射热计的应用要求。V2 O5/V/V2 O5 trilayer thin film with different deposition time of V layer was prepared on glass substrates by DC magnetron sputtering at room temperature . T hen all of the as-deposited V2 O5/V/V2 O5 trilayer thin film were annealed at 450 ℃ for 60 min under air atmosphere .The photo-electric performance of the V2 O5/V/V2 O5 trilayer thin film was studied by four-point probe measure-ment .The structure of the V2 O5/V/V2 O5 three-layer thin film was analyzed by X-ray diffraction （XRD） .The results show that the annealed V2 O5/V/V2 O5 trilayer thin film with 25 min of V layer deposition possesses a square resistance of 38 .5 kΩ ,a temperature coefficient of resistance （TCR） of-0 .021 8 K -1 and an infrared absorption of above 0 .6 at the band between 700 nm and 1 400 nm ,so it is suitable for the application of uncooled micro-bolometer .

关 键 词：V2O5 V V2O5复合膜 直流磁控溅射 光电性能 

分 类 号：TB43[一般工业技术] TG174.444[金属学及工艺—金属表面处理]