氮化铝纳米锥的低温生长与场发射性能(英文)  

Low-Temperature Growth and Field Emission Property of AlN Nanocones

作　　者：裴笑竹 赖宏伟[1] 张永亮[1] 蔡婧[1] 吴强[1] 王喜章[1] 

机构地区：[1]介观化学教育部重点实验室 南京大学化学化工学院,南京210093

出　　处：《无机化学学报》2014年第7期1719-1724,共6页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.21173115);“973”(No.2007CB935503)资助项目

摘　　要：考察了在600℃以下通过反应AlCl3＋NH3→AlN＋3HCl制备AlN纳米锥的规律，结果表明在500℃时仍可获得AlN纳米锥，当温度为480℃时则无氮化物生成。场发射测试显示在500～600℃温区内制得的AIN纳米锥的开启电场处于14．2～20V·μm^-1范围，且随制备温度升高而减小。结果表明AlN纳米锥可在低温条件下获得，且具有较好的场发射性能。The preparation of A1N nanostructures via the chemical reaction between AlCl3 and NH3 at temperature below 600 ℃ was examined, and AlN nanocones have been obtained at 500 ℃ while no nitride product could be formed at 480 ℃. Field emission measurements show that the AlN nanocones prepared in the temperature range of 500-600℃ exhibit turn-on fields of 14.2 -20 V·μm^-1 which decreases with the elevation of growth temperature. This implies that the AlN nanocones can be gown at lower temperature for field emitters.

关 键 词：氮化铝 低温生长 化学气相沉积 场发射 纳米锥 

分 类 号：O611.4[理学—无机化学]