Au量子点I-V特性的计算机模拟  

Computer simulation of I-V characteristics of Au quantum dot

作　　者：周继承[1] 何红波[1] 李义兵[1] 

机构地区：[1]长沙铁道学院材料研究所,长沙410075

出　　处：《功能材料与器件学报》2001年第1期51-53,共3页Journal of Functional Materials and Devices

基　　金：国家自然科学基金! (69890227;69971007);霍英东基金资助

摘　　要：基于量子力学隧穿原理，对由 Au纳米粒子自组装体系构建的典型串联双隧道结模型的 I-V特性进行了计算机模拟 ,模拟结果与实验曲线吻合。该方法对于构建纳米电子器件模型 及工艺优化将具有指导意义。Based on the quantum mechanics tunneling theory, the computer simulation of I-V (cur- rent-voltage) characteristics of a standard double barrier tunneling junction model which is made of gold nanoparticles self-assembly systems are performed. The simulation results are agreed with the experimental I-V curves. This method may serve as a guide for constructing the model of nano-scale electronic devices and optimizing their technological y parameters.

关 键 词：金纳米粒子自组装体系 量子点 隧穿 计算机模拟 I-V特性 

分 类 号：TN405[电子电信—微电子学与固体电子学] TP391.9[自动化与计算机技术—计算机应用技术]