基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源  

Development of D-Band and G-Band frequency multiply sources with Schottky diodes of NEDI

作　　者：姚常飞[1,2] 周明[2] 罗运生[2] 林罡[1] 李姣[2] 许从海[2] 寇亚男[2] 吴刚[2] 王继财[2] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 [2]南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016

出　　处：《红外与毫米波学报》2014年第3期256-262,共7页Journal of Infrared and Millimeter Waves

摘　　要：基于南京电子器件研究所（NEDI）的GaAs工艺线，通过分析器件的有源层（缓冲层、外延层）材料掺杂浓度和厚度、肖特基接触面积等，综合优化二极管性能，研制出了截止频率为3.2THz的太赫兹变阻二极管.基于该二极管，通过建立其三维场结构，采用电磁场和电路仿真软件相结合的方法，一体化设计匹配电路和器件，研制出了D波段和G波段倍频源.D波段二倍频器在152.6GHz测得最高倍频效率为2.7%，在147.4～155GHz效率典型值为1.3%.G波段二倍频器在172GHz测得最高倍频效率为 2.1%，在150～200GHz效率典型值为1.0%.Terahertz Schottky varistor diode with cutoff frequency of 3.2THz was developed based on GaAs process of Nanjing Electronic Devices Institute （NEDI）. The performances of diodes are optimized by optimization of active layer （expital layer and buffer layer） doping, thickness, and Schottky contact area. Physical structure of the nonlinear diode was setup, and EM software and circuit software were combined together for impedance matching analysis. For the D-band doubler, highest measured multiply efficiency is 2.7% at 152.6GHz, and typical efficiency is 1.3% in 147.4～155GHz. For the G-band doubler, highest measured multiply efficiency is 2.1% at 172GHz, and typical efficiency is 1.0% in 150～200GHz.

关 键 词：太赫兹 GaAs肖特基二极管 倍频器 

分 类 号：TN77[电子电信—电路与系统]