F类Doherty功率放大器的设计  

Design of Class F Doherty Power Amplifier

作　　者：南敬昌[1] 方杨[1] 李厚儒[1] 

机构地区：[1]辽宁工程技术大学电子与信息工程学院,辽宁葫芦岛125105

出　　处：《固体电子学研究与进展》2014年第3期216-220,279,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61372058)

摘　　要：为了满足新一代基站对功率放大器效率的要求,将开关F类功率放大器与Doherty理论相结合,并从实际应用考虑,采用LDMOS管研制了一款应用于FDD-LTE基站的高效率功率放大器,并将其与数字预失真系统结合。实测结果显示,设计的功放小信号增益为15dB左右,整个6dB回退范围内的功率附加效率大于42%,经过数字预失真系统纠正后的ACLR达-60dBc@5MHz,基本实现了高效率和高线性度的设计要求。In order to meet the requirement of new generation base station for power ampli- fier with high efficiency, this paper, on the basis of class F power amplifier and Doherty theory, took the practicalities into consideration and developed a high efficiency power amplifier using LDMOS devices for FDD-LTE base station application. The test results of class F Doherty have power amplifier 15 dB small signal power gain and no less than 42% power added efficiency at 6 dB back-off region. In addition, high linearity performance of -60 dBc@ 5 MHz ACLR is a- chieved by using digital predistortion correction. These performances can meet the requirements of high efficiency and high linearity for modern power amplifier.

关 键 词：F类Doherty 数字预失真 横向扩散金属氧化物半导体 FDD-LTE基站 相邻信道功率泄漏比 

分 类 号：TN722.75[电子电信—电路与系统]