大功率InGaN蓝光LED的电子束辐照效应  

Electron-beam Irradiation Effect of High-power InGaN Blue LED

作　　者：张瑞宾[1] 李天明[1] 黄以平[2] 宁忠萍[3] 刘海浪[2] 

机构地区：[1]桂林航天工业学院汽车工程系,广西桂林541004 [2]桂林电子科技大学机电工程学院,广西桂林541004 [3]桂林航天工业学院教务处,广西桂林541004

出　　处：《固体电子学研究与进展》2014年第3期256-261,共6页Research & Progress of SSE

基　　金：广西自然科学基金资助项目(2013GXNSFAA019322);广西制造系统与先进制造技术重点实验室主任基金资助项目(12-071-11-61_004)

摘　　要：采用Monte-Carlo模拟与实验研究相结合的方法,针对大功率InGaN蓝光LED进行了电子束辐照效应研究。根据InGaN蓝光LED芯片材料的特点,在CASINO软件中建立了结构模型。运用Monte-Carlo模拟分析了以不同能量的电子束射入芯片材料时,电子的运动区域及能量损耗等变化情况。使用光谱辐射计对辐照前后LED进行测试,从宏观的角度研究了电子束对LED光电特性的影响。结果表明:InGaN材料对能级越低的电子能量吸收能力越强,能级越低的电子束对InGaN蓝光LED芯片的光通量及辐射通量辐照损伤影响越大。The electron-beam irradiation effect of high power InGaN blue LED is studied by Monte Carlo simulation and experiments. According to the characteristic of high-power LED chip, the structure model of InGaN chip is set up in CASINO. The movement area and energy loss of electrons are analyzed by the Monte-Carlo theory to simulate electrons with different ener- gy irradiated into chip materials. With speetroradiometer testing LEDs before and after irradia- tion, the influence of the electron beam irradiation on LED is studied from the macroscopic view. The results show that the energy absorption capability of InGaN material is stronger for lower e- lectron energy, while the luminous and radiation flux of high-power InGaN blue LED is seriously injured by lower energy electron beam.

关 键 词：电子束辐照 大功率发光二极管 蒙特卡洛 铟镓氮 辐照损伤 

分 类 号：TL55[核科学技术—核技术及应用] TN312.8[电子电信—物理电子学]