MOS工艺下叉指夹心集成电容的结构及其模拟分析  

A novel capacitor integrated approach and analysis of comb electrodes structure with filling based on CMOS fabrication

作　　者：曹新亮[1] 崔巍[1] 

机构地区：[1]延安大学物理与电子信息学院,陕西延安716000

出　　处：《电子设计工程》2014年第12期114-116,共3页Electronic Design Engineering

基　　金：延安大学回校博士科研启动基金项目(YD2010-03)

摘　　要：针对较大电容难以集成的实际,提出叉指夹心集成电容结构,采用横向电通量增加电容策略,在顶层上布铝导线呈平铺叉指夹心结构,涂盖Si3N4为介质,通过选择考虑边缘效应的模型进行仿真模拟,观测这种结构下两种连接方式电容的大小,得到了一定叉指电极长度的电容值可达到约15.3 pF.It is difficult for integrated larger capacitance. The integrated interdigital capacitor with sandwich structure is made, it employed increase capacitor by increased transverse electric flux, that aluminum wire cloth on the top layer was tiled interdigital into sandwich structure and painted Si3N4 for cover as the media, then, edge effects model were selected for simulation. The result showed that this capacitance values can reach lengths of about 15.3 pF, in case of the next two connections capacitor structure.

关 键 词：电容集成 MOS工艺 叉指夹心结构 介电常数 

分 类 号：TN403[电子电信—微电子学与固体电子学]