LTE/WiMAX片上变压器的分析与设计  

Analysis and Design of On-Chip Transformers for LTE/WiMAX

作　　者：张华斌[1,2] 蔡敏[1] 武海军 李正平 

机构地区：[1]华南理工大学电子与信息学院,广州510640 [2]电子科技大学中山学院,广东中山528402 [3]广州润芯信息技术有限公司,广州510663

出　　处：《电子科技大学学报》2014年第3期363-368,共6页Journal of University of Electronic Science and Technology of China

基　　金：国家863计划(2009AA01Z260);广东省科技计划项目(2010A090601001)

摘　　要：针对TSMC 0.13μm RF CMOS射频和混合信号工艺器件库中无变压器器件，而变压器器件是设计射频通信电路的关键，该器件的有无直接影响射频通信前端电路性能的优劣。通过对多种片上变压器的性能研究，设计出应用于LTE/WiMAX的八边形片上变压器，给出了与频率无关的集总元器件等效电路模型及模型参数提取公式，并对新器件进行了流片，测试结果表明在0.1～10 GHz频率范围内L、Q参数具有良好的吻合性，且耦合系数K良好，达到设计目的。该变压器的设计成功将有助于4G通信芯片的开发和应用。Transformer is a key device in radio frequency communication circuit, which can directly effect on the performance of the RF front-end circuit. However, there is not transformer in TSMC 0.13 μm RF CMOS mixed-signal process library. In order to solve this problem, an octagonal transformer which is applied in LTE/WiMAX is designed and fabricated by the analysis of all kinds of on-chip transformer performance, and the frequency-independent lumped-element equivalent circuit model and the parameter-extracted expressions are given. The measurement results show that L and Q have excellent agreement with the measured data from the frequency range of 0.1 GHz to 10 GHz, and coupling coefficient K is perfect. The successful design of the transformer will contribute to the development and application of 4G communication chips.

关 键 词：LTE WIMAX 集总参数模型 八边形 片上变压器 射频 

分 类 号：TN4[电子电信—微电子学与固体电子学] TN6