基于NAND Flash大容量数据存储器的设计  

Design of huge capacity memory based on NAND Flash

作　　者：孔令振[1] 穆建文 

机构地区：[1]北京环境特性研究所,北京100859

出　　处：《微型机与应用》2014年第9期25-27,共3页Microcomputer & Its Applications

摘　　要：针对存储系统对存储容量和存储带宽的要求越来越高,设计了一款高性能海量数据存储器。该存储器采用NAND型Flash作为存储介质,单板载有32片芯片,可实现256 GB的数据存储。存储器通过FPGA控制多片NAND Flash芯片并行读写来提高读写带宽,以实现大容量高带宽的存储器,能够满足高分辨率高帧频CCD相机存储需求。In order to comply with requirements of the memory capacity and bandwidth in storage system, the paper designs a high performance memory storage. The memory storage uses NAND Flash as storage medium , and a single board has 32 pieces of Flash, which can achieve a huge capacity of 256 GB. It also employs FPGA to expand the read ＆amp; write bandwidth by parallel operations on multiple pieces of Flash. It can meet the high resolution and high frame CCD camera storage requirements.

关 键 词：FPGA NAND FLASH 并行读写 

分 类 号：TP391[自动化与计算机技术—计算机应用技术]