高温超导薄膜射频溅射靶的简便制作  

Preparation of Radio-Frequency Sputtering Target for High Tc Superconductive Film of Bi-Sr-Ca-Cu-O

作　　者：陈宝琼 张世宏[1] 唐桂英 彭少麒[1] 

机构地区：[1]中山大学物理学系

出　　处：《中山大学学报（自然科学版）》1992年第4期128-129,共2页Acta Scientiarum Naturalium Universitatis Sunyatseni

摘　　要：本文报导了一个极其简便的高温超导薄膜溅射靶的制作方法。并制得可控制名义组分的Bi-Sr-Ca-Cu-O的超导薄膜,其T_(CM)温度为84K,零电阻温度为60.3K。An extremely simple and convenient method of preparing radio-frequencysputtering target for high Tc superconductive film in the Bi-Sr-Ca-Cu-O withcontrolled component ratio is reported. The film transition temperature ismeasured to be around 84K and non-resistance temperature is at about 60. 3K.

关 键 词：超导薄膜 射频溅射 高TC 溅射靶 

分 类 号：O511.1[理学—低温物理]