(Ph,La)TiO_3铁电薄膜的表面态分析  

Analysis of Surface States of Ferroelectric (Ph,La)TiO_3 Thin Films

作　　者：朱基亮[1] 朱建国[1] 申林[1] 潘宇[1] 肖定全[1] 

机构地区：[1]四川大学材料科学系,四川成都610064

出　　处：《功能材料》2001年第2期149-150,153,共3页Journal of Functional Materials

基　　金：863计划资助项目

摘　　要：利用（Ｐｈ，Ｌａ）ＴｉＯ３陶瓷靶材，采用射频磁控溅射技术室温淀积，其后在６００℃下退火，制备ＰＬＴ铁电薄膜。通过对薄膜进行ＸＰＳ和ＥＤＡＸ分析，发现薄膜表面富钛。与利用其它工艺技术如多离子束反应共溅射、ｓｏｌ－ｇｅｌ等技术制备的ＰＬＴ铁电薄膜进行对比可以看出，利用不同技术制备的铁电薄膜，具有不同的表面态。(Pb, La) TiO3 ferroelectric thin films were prepared by RF magnetron sputtering technique with ceramic target, depositing at room temperature and annealing at 600°C. The XPS and EDAX studies show that these films are Ti enriched in the near surface region. In comparison with the PLT thin films prepared by other techniques such as multi-ion-beam reactive co-sputtering (MIBRECS) and sol-gel, it is found that the PLT thin films prepared by different techniques possess different surface states.

关 键 词：射频磁控溅射 铁电薄膜 EDAX XPS 表面态分析 

分 类 号：TN304.9[电子电信—物理电子学] O484.5[理学—固体物理]