一种新型真空微电子压力传感器的研制  

Development of a Novel Microelectronic Vacuum Pressure Sensor

作　　者：张正元[1] 徐世六[1] 温志渝[2] 张正璠[1] 黄尚廉[2] 

机构地区：[1]信息产业部电子第二十四研究所,重庆400060 [2]重庆大学光电工程系,重庆400044

出　　处：《微电子学》2001年第2期97-99,120,共4页Microelectronics

摘　　要：采用各向异性腐蚀与各向同性腐蚀相结合的技术和特殊的硅 -硅键合技术 ,成功地研制出了一种新型真空微电子压力传感器。测试分析结果表明 ,该传感器反向击穿电压达到 1 0 0 V;在加 3V正向电压时 ,其单个锥尖发射电流为 0 .2 n A;在 2 5～ 1 0 0 g的压力范围内与输出电压呈线性关系 ,灵敏度为 0 .WT5”BZ]A novel microelectronic vacuum pressure sensor is described, which is fabricated by using anisotropic etching combined with isotropic etching, as well as a special SDB technology Results from measurement and analys is show that breakdown voltage of the sensor is 100 V, the emitting current of a single silicon tip is 0 2 nA at a forward voltage of 3 V, the pressure on the sensor is linear with the output voltage at the pressure range of 25 g ～100 g, and the sensitivity of the sensor is 0 1 μA/g [WT5HZ]

关 键 词：微电子传感器 真空压力传感器 各向异性腐蚀 

分 类 号：TP212.12[自动化与计算机技术—检测技术与自动化装置]