热壁外延生长GaAs/Si薄膜质量研究  

Analysis of Spectroscopy for GaAs Layer on Si Substrate in Wall Expectixy

作　　者：谭红琳[1] 张鹏翔[1] 刘翔[1] 吴长树[1] 

机构地区：[1]昆明理工大学材料与冶金学院材料系,昆明650051

出　　处：《光电子．激光》2001年第3期236-238,共3页Journal of Optoelectronics·Laser

基　　金：云南省应用基础研究资助项目 (99F0 0 42 M)

摘　　要：本文研究了用热壁外延 (HWE)技术在 Si衬底上不同工艺下生长的 Ga As薄膜的拉曼 (Raman)和荧光 (PL )光谱。研究表明 :在室温下 ,Ga As晶膜的 Raman光谱的 2 6 5 cm- 1 横声子 (TO)峰和 2 89cm- 1 纵声子 (L O)峰的峰值之比随晶膜质量的变好而逐渐变大、半高宽 (FWH M)变窄且峰值频移移动变小 ,而PL光谱出现在 871nm光谱的 FWH M较窄 ,表明所测得的薄膜为单晶晶膜。对同一晶膜也可判断出均匀程度。因此可以通过拉曼光谱和 PL光谱相结合评定外延膜晶体质量。The paper studies Raman and Photoluminescense (PL) spectroscopy of the GaAs layer on Si substrate with different grown condition by hot wall expectixy (HWE) method.The result of Raman experiement shows that the ratio of the intensities of TO peak 265 cm -1 and LO peak 289 cm -1 have gradually increased with the GaAs layer crystal quality at room temperature.In addiction to it was found that LO peak of GaAs/Si were shifted 3 cm -1 compare with the standard GaAs·Besides,the peak of PL is in 871 nm,and the FWHM of Raman spectra and the FWHM of PL spectra are both narrow.It seems that the more the shift,the poor the quality.Then,these result show that GaAs/Si is high structural quality.At the same time,same layer spectra crystallinity can also be measured its homogeneity.Therefore,the quality of the epitaxial layer of GaAs/Si measurement one can estimate through Raman-PL spectra

关 键 词：薄膜 热壁 外延生长 砷化镓 硅 

分 类 号：TN304.23[电子电信—物理电子学]