非对称晶闸管的阻断电压  

Blocking Voltage of Asymmetric Thyristors

作　　者：高玉民[1] 

机构地区：[1]西安交通大学电子工程系

出　　处：《西安理工大学学报》1995年第1期38-43,共6页Journal of Xi'an University of Technology

摘　　要：在有效碰撞电离率近似下，推导出给定正向阻断电压和电流放大系数的ＡＳ－ＣＲ长基区参数满足的关系式。数值计算结果表明，把此关系式与有效碰撞电离率系数和雪崩倍增因子参数的经验公式相结合，是一种快速、精确设计ＡＳＣＲ正向阻断电压的方法。The relational expression of ASCR long base parameters with given forward bolcking voltageand current gum in a common-base configuration under the condition of approximation of effectiveionization rate are derived in the paper. The numerical computation results shown that the above formula which in connection with the empirical expressions of effective ionization rate confficient and theavalanche multiplication factor parameter is a method in designing the blocking voltage of ASCRquickly and exactly.

关 键 词：非对称晶闸管 阻断电压 穿通击穿 

分 类 号：TN34[电子电信—物理电子学]