2MeV ~4He^+背散射测定固体薄膜厚度的研究  

Thickness measurement of thin solid films by 2MeV ~4He+ Rutherford backscattering

作　　者：赵玉华[1] 许国基[1] 郑胜男[1] 徐永昌 

机构地区：[1]中国原子能科学研究院

出　　处：《核技术》1991年第6期326-332,共7页Nuclear Techniques

摘　　要：本文从实验上研究了用2MeV ~4He^+背散射对从几十nm到几个μm范围内的各种固体薄膜的厚度进行精确测量的方法。并对各种测量方法和测量结果进行了详细的讨论。The methods of precisely measuring thin solid film thickness in the range of tens nm to several μm by 2MeV 4He+ Rutherford backseattering are studied. Detailed discussion about different methods and the experimental results are given.

关 键 词：固体 薄膜 厚度 测量 背散射 

分 类 号：O484.5[理学—固体物理]