(Cs,O)/GaAs热退火的变角XPS定量研究  

QUANTITATIVE STUDY ON(Cs,O)/GaAs UNDER ANNEALING BY ANGULAR DEPENDENT XPS

作　　者：汪贵华[1] 富容国[1] 杨伟毅[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《真空与低温》2001年第1期58-62,共5页Vacuum and Cryogenics

摘　　要：用变角 X射线光电子能谱 (XPS)技术分析了 GaAs光阴极的表面及其在热退火后的效应，首次定量地计算了 (Cs,O)/GaAs系统的表面 (Cs,O)层和界面 (Ga,As)弛豫层的厚度和组分。 (Cs,O)/GaAs系统在 625～ 650℃的热退火后， (Ga,As)驰豫层厚度减薄， Ga,As的原子浓度增大；且消除了 O与 As的化学连接。The annealing effects of the GaAs surface for photocathode were analyzed by quantitative angular-dependent X-ray electron spectroscopy(XPS) technique.The thickness and composition of(Cs,O) layer and (Gs,As) transition layer were first gained. It was found that after heat annealing at 625～ 650℃ the thickness of (Ga,As) layer became thinner,the atom density of Ga＆ As got larger,the binding of O and As w as eliminated.

关 键 词：变角X射光电子能谱 光电阴极 层结构 热退火 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]