晶体管参数ts引起的电子镇流器功率变化问题探讨  

Inquire Into Problem of Power Change Caused by Transistor Parameter ts in Electronic Ballast

作　　者：沈源生 

机构地区：[1]无锡华晶微电子股份有限公司,江苏无锡214061

出　　处：《微电子技术》2001年第2期18-23,共6页Microelectronic Technology

摘　　要：本文简要介绍了晶体管的开关特性参数 ,详尽分析了ts对电子镇流器振荡频率和线路输入功率的影响 ,讨论了ts值相差较大的晶体管在电子镇流器中应用时出现的某些问题。The parameter of switching character for a transistor is introduced briefly in the paper,and a detailed analysis also given for the effect of ts on oscillation frequency and the power of the electronic ballast Discussion on some problems, occurred when transistors with very different values of ts used in the electronic ballast,is presented

关 键 词：晶体管 ts参数 功率 电子镇流器 

分 类 号：TM923.61[电气工程—电力电子与电力传动]