淀积参数对ITO膜电阻率的影响  

Effect of Deposition Parameters on Resistivity of ITO Film

作　　者：张怀武[1] 许武毅[1] 过壁君[1] 

机构地区：[1]电子科技大学90B,成都610054

出　　处：《Journal of Semiconductors》1993年第3期160-165,共6页半导体学报（英文版）

摘　　要：本文研究了基体偏压、氧分压强和淀积后退火对ITO膜电阻率的影响,通过比较理论结果和实验结果,弄清了这几个参数影响ITO膜电阻率的机理,并确定出最佳镀制参数。Effects of base bias voltage, oxygen partial pressure and post-deposition annealing on theresistivity of ITO film have been studied. Comparing the theoretical results with experimentalresults, the mechanism of the effect has been clar fied. The optimum parameters have also, beendetermined.

关 键 词：半导体膜 氧化铟锡 电阻率 淀积 

分 类 号：TN304.055[电子电信—物理电子学]