薄膜磁敏元件基片的选择与制备  

Selection and Fabrication of Substrate for Thin Film Magneto sensors

作　　者：李云鹏[1] 孙承松[1] 周立军[1] 关杰[2] 曾永宁 

机构地区：[1]沈阳工业大学,沈阳市110023 [2]沈阳仪器仪表工艺研究所,沈阳市110043

出　　处：《仪表技术与传感器》1995年第3期14-16,30,共4页Instrument Technique and Sensor

摘　　要：本文论述了薄膜磁敏元件对基片的要求,依此要求选择硅和高密度铁氧体为基片,上面制备SiO_2作绝缘膜。重点论论了用射频溅射法制备SiO_2膜。文章就溅射条件和膜特性进行了实验,给出实验结果。Requirement of Substrate in thin film magneto sensor is reported. In accordance with the requirement, We select silicon and ferrite of high density as substrate. SiO2 is made insulation film on the substrate. It is the key that SiO2 film is made by sputtering. This paper researched influence of sputtering condition and gives result of experiment.

关 键 词：薄膜 磁敏元件 基片 溅射 

分 类 号：TN382[电子电信—物理电子学]