Fe/GaAs(100)界面构成和电子态的同步辐射研究  

Study of Interfacial Formation and Electronic Structures at Fe/GaAs(100) Interface by Synchrotron Radiation Photoemission

作　　者：祝传刚[1] 徐彭寿[2] 李伟刚[1] 郭红志[2] 陆尔东[2] 徐发强[2] 潘海斌[2] 

机构地区：[1]海军潜艇学院基础部,青岛266071 [2]中国科技大学国家同步辐射实验室,合肥230029

出　　处：《真空科学与技术》2001年第2期125-128,共4页Vacuum Science and Technology

摘　　要：利用同步辐射光电子能谱技术详细研究了Fe/GaAs(10 0 )的界面反应和电子结构。在界面处 ,Fe与As形成稳定的化学键 ,而Ga则溶解到Fe薄膜中形成合金 ,但反应只能在界面处发生 ,形成窄的反应层。Fe沉积后改变了GaAs表面的电子结构 ,重新钉扎了费米能级位置 ,引起费米能级向价带顶移动 0 2 7eV。另外 ,Fe的生长模式在沉积过程中发生改变 ,而且存在As和Ga的扩散现象 ,同步辐射价带谱也证实了这一点。Interface reactions and the electronic structures at Fe/GaAs(100) interface were studied by synchrotron radiation photo emission.We found that Ga diffuses into Fe film to form some kind of alloy and that Fe and As atoms form stable chemical bond.The reaction takes place only at the interface,resulting in the formation of a narrow interface layer.Fe deposition alters the surface electronic structures of GaAs,re pinning the Fermi level,which shifts 0.27 eV downwards to the valence band.Fe growth mode varies in Fe deposition;diffusion of Ga and As was also observed. These observations were confirmed by the valence band spectra of synchrotron radiation photo emission.

关 键 词：界面 半导体 同步辐射 光电子能谱 铁 磁性薄膜 砷化镓 化学反应 电子结构 

分 类 号：TN304.23[电子电信—物理电子学] O485[理学—固体物理]