在不同基体上沉积c-BN膜的研究  

DEPOSITION OF C-BN FILMS ON DIFFERENT SUBSTRATES

作　　者：张晓玲[1] 胡奈赛[2] 何家文[2] 

机构地区：[1]西安交通大学材料学院,710049 [2]西安交通大学金属材料强度国家重点实验室

出　　处：《材料研究学报》2000年第B01期104-107,共4页Chinese Journal of Materials Research

基　　金：国家自然科学基金!59671064

摘　　要：研究了在不同基体上用射频 ＰＣＶＤ方法沉积的 ＢＮ膜结果表明，镀层中的 Ｃ-ＢＮ含量、残余应力、镀层硬度基本上不受基体种类的影响，但沉积速度、膜基结合力却有较大差别镀层由 ａ－ＢＮ和 ｃ-ＢＮ组成， ｃ-ＢＮ的尺寸为 ２０～４０ｎｍ．镀层的硬度为 ＨＶ３０００，残余应力为 ７．０ＧＰａ．Boron nitride films were deposited on different substrates by r. f. plasma-assisted CVD technique. It was found by using FTIR, TEM and SEM analyses that under the same deposition condition the c-BN content, residual stress and hardness of the films were independent of the substrates, but there were some differences in deposition rate and bonding strength among the films with different substrates. The films obtained were a mixtures of amorphous and cubic BN phases, with the sizes of the c-BN particles being 20~40 urn, the hardness being 3000/HV0.04N, and the residual stress being 7.OGPa.

关 键 词：金属 立方氮化硼薄膜 射频PCVD 基体 结合力 硬度 

分 类 号：TG174.45[金属学及工艺—金属表面处理] O484[金属学及工艺—金属学]