InGaAs/InGaAsP/InP长波长雪崩光电二极管研究  

STUDY ON InGaAs/InGaAsP/InP SAGM AVALANCHE PHOTODIODE

作　　者：李锋[1] 王树堂[1] 曾靖[1] 樊爱香[1] 夏彩虹[1] 孙捷[1] 胡春阳[1] 白金花[1] 陈心敏 

机构地区：[1]中国科学院半导体研究所物理部,北京100083

出　　处：《红外与毫米波学报》1991年第1期67-72,共6页Journal of Infrared and Millimeter Waves

摘　　要：研制了高速、高效、低噪声的InGaAs/InGaAsP/InP长波长(1.0～1.7μm)台面型雪崩光电二极管(φ=75μm),器件采用分离的吸收区、雪崩区和能隙过渡区的SAGM结构。研究了器件最佳结构参数设置、在InP上匹配生长InGaAs、InGa AsP及其厚度和载流子浓度的控制问题。器件最大倍增因子大于50,灵敏度大于0.70μA/μW,暗电流I_D的典型值约为20nA(V_r=0.9V_B)。Mesa InGaAs/InGaAsP/InP avalanche photodiodes (φ=75μm) have boon studied and developed with high response speed, high efficiency and low noise in the long wavelength range from 1.0μm to 1.7μm. The structure with separated absorption, energy gap-graded and multiplication regions (SAGM)has been used. The optimum conditions for the structure parameters, the lattice-matched liquidphase epitaxial growth of InGaAsP, InGaAs layer on InP substrate, the controlling of layer thicklness and carrier concentration of the various epitaxial layers have been investigated. The maximum multiplication factor of the device is higher than 50. The sonsitivety is higher than 0.70μA/μW. The typical dark current is about 20nA (V_r=0.9V_B).

关 键 词：光电二极管 雪崩倍增管 耗尽层 

分 类 号：TN364.2[电子电信—物理电子学]