SmCo／Cr磁性薄膜的工艺与性能  

Processing and Properties of SmCo/Cr Magnetic Films

作　　者：Hu Yongshi Wang Xiang Li Zuoyi Lin Gengqi 胡用时[2] 王翔[2] 李佐宜[2] 林更琪[2] 

机构地区：[1]Dept. of Electronic Sci. Tech., Huazhong Univ. of Sci. Tech.,,武汉430074 [2]华中理工大学电子科学与技术系,

出　　处：《信息记录材料》2001年第2期11-13,共3页Information Recording Materials

摘　　要：通过对磁控溅射条件的优化，制备出了较理想的SmCo(Al,Si)/Cr硬盘磁记录介质。退火处理后又得到较好的硬磁薄膜。结果表明，Sm含量在31.6％ atm,Cr缓冲层为66 nm，Sm(CoAlSi)5磁性层为30 nm等条件下，制得的Sm(CoAlSi)5/Cr薄膜的矫顽力(Hc)为187.8 kA/m(2.36 kOe)，矩形比( S=Mr/Ms)≈0.94；在500℃保温25 min退火后，矫顽力(Hc)达1042.5kA/m(13.1 kOe)，矩形比(S)≈O.92。Sm(CoAlSi)5/Cr films had been prepared as one kind of promising materials for the ultrahigh density magnetic recording media by magnetron sputtering under the optimal conditions. They are also suitable for a variety of applications, from longitudinal recording media to thin film permanent magnets, through being annealed. When Sm content, Cr underlayer thickness and the thickness of Sm(CoAlSi)5 magnetic thin film equals 31.6％ atm,66 nm and 30 nm, respectively,Sm(CoAlSi)5/Cr thin films with coercivity up to 2.36 kOe， Squareness ratio S nearly 0.94. After being annealed at 500℃ for 25 min, the films with coercivity Hc up to 13.1 kOe, Squareness ratio S about 0.92 were obtained.

关 键 词：矫顽力 SmCo(AI Si)/Cr薄膜 磁性能 磁控溅射 磁性薄膜 磁记录介质 工艺 性能 

分 类 号：TQ584[化学工程—精细化工] TQ586