Measurement of Refractive Indices of (Al_xGa_(1-x))_(0.51)In_(0.49)P Grown by Low Pressure Organometallic Vapor Phase Epitaxy  

低压金属有机化合物气相外延生长的 (Al_x Ga_(1-x))_(0 .5 1)In_(0 .49)P折射率测量(英文)

作　　者：廉鹏[1] 马骁宇[2] 张广泽[2] 陈良惠[2] 

机构地区：[1]北京工业大学电子工程学系,北京100022 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2001年第4期398-401,共4页半导体学报（英文版）

摘　　要：The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.采用测量反射谱方法确定了低压金属有机化合物气相外延生长的与 Ga As衬底匹配 (Alx Ga1 - x) 0 .5 1 In0 .49P外延材料的折射率 .实验中测量的反射谱波长范围为 0 .5— 2 .5 μm.在拟合实验数据过程中采用了单振子模型 .折射率数据用于分析应变量子阱 Ga In P/ Al Ga In P可见光激光二极管波导 ,计算出的器件远场图与实验数据吻合很好 .

关 键 词：LP-OMVPE refractive index MEASUREMENT GAINP/ALGAINP 

分 类 号：TN304.07[电子电信—物理电子学]