加压布里奇曼法生长大直径HgCdTe晶体  

Growth of Large Diameter (φ40mm) HgCdTe Crystal By Pressure-Modified Bridgman Method

作　　者：王跃[1] 李全保[1] 韩庆林[1] 马庆华[1] 宋炳文[1] 介万奇[2] 周尧和[2] 

机构地区：[1]昆明物理研究所材料研究室,昆明650223 [2]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《Journal of Semiconductors》2001年第4期440-445,共6页半导体学报（英文版）

基　　金：国防科工委资助&&

摘　　要：根据加压改进布里奇曼法 ,采用“二次配料”工艺成功地生长了直径 40 mm的大直径 Hg Cd Te (组分 x≈0 .2 0 )晶体 .采用加压技术 ,平衡部分石英安瓶内的高汞蒸汽压 ,有效地避免了石英安瓶的爆裂 ;采用“二次配料”工艺 ,大大降低了生长温度 ;合理选择温度梯度和生长速度 ,获得了有较好结晶性和组分均匀性的 Hg Cd Te晶体 .分析表明 :Hg Cd Te晶片的载流子浓度 n77≤ 4× 10 1 4 cm- 3 ,迁移率 μ77≥ 1× 10 5 cm2 /(V· s) ,少数载流子寿命值 τ≥ 2 .0 μs,80 K时简单的性能测试用光导探测器件的探测率 D*为 1.1× 10 1 0 cm· Hz1 /2 /W.High-quality HgCdTe crystal (x=0.21) with diameter of φ40mm has been grown successfully using new Pressure-Modified Bridgman(PM-Bridgman) method with starting charge of 0 06,as well as the burden technology.Suitable high pressure of N 2 outside the synthesis quartz ampoule and growth quartz ampoule can balance the high mercury pressure in the ampoules and avoid the explosion of large-diametet quartz ampoules during the synthesis and growth of HgCdTe.Twice burden technology is proposed to lower the growth temperature and get HgCdTe crystals with perfect structure,uniform composit on and good electrical properties.The investigation shows that the carrier concentration of HgCdTe wafers n 77 ≤4×10 14 cm -3 ,mobility μ 77 ≥1×10 5cm 2/(V·s) and life-time τ≥2 0μs.

关 键 词：加压布里奇曼法 HGCDTE晶体 晶体生长 红外半导体材料 

分 类 号：TN213[电子电信—物理电子学]