新型GaAs/AlGaAs量子阱红外探测器暗电流特性  

Analysis of Dark Current Characteristic of Novel GaAs/AlGaAs Quantum Well Infrared Photodetectors

作　　者：史衍丽[1] 邓军[1] 杜金玉[1] 廉鹏[1] 高国[1] 陈建新[1] 沈光地[1] 尹洁[2] 吴兴惠[3] 

机构地区：[1]北京工业大学,北京光电子技术实验室北京100022 [2]华北光电技术研究所红外室,北京100015 [3]云南大学物理系,昆明650091

出　　处：《Journal of Semiconductors》2001年第4期503-506,共4页半导体学报（英文版）

摘　　要：对基于 Ga As/ Al Ga As系子带间吸收的一种新型量子阱红外探测器 ,采用 Poisson方程和 Schrodinger方程 ,计算了新器件结构的能带结构、电子分布特性 ,在此基础上采用热离子发射、热辅助遂穿模型对器件的暗电流特性进行了模拟 ,计算结果与器件实测的暗电流特性吻合得很好 ,说明热离子发射、热辅助遂穿机制是形成器件暗电流的主要构成机制 ,增加垒高、降低阱中掺杂浓度及降低工作温度是抑制器件暗电流的主要途径 ,计算结果对进一步优化器件的设计将起到重要的理论指导作用 .A new type of GaAs/AlGaAs quantum well Infrared photodetectors has been proposed.The electronic energy-band structure and the distribution of electrons in the well have been numerically calculated based on the Poisson Equation and the Effective Mass Equation.Dark current characteristics of the devices with one well and ten wells are simulated,respectively,by a model,consindering the thermionic emission and thermally assisted tunneling in the Wentzel-Kramers-Brillouin approximation.The influences of the key parameters,including barrier height,doping concentration in the well and temperature on the dark current,have been further analyzed based on this model.In consequence, the dark current can be greatly reduced by increasing the barrier height or decreasing the doping in the well and the temperature.[KH8/9D]

关 键 词：GAAS/AIGAAS 量子阱红外探测器 暗电流特性分析 砷化镓 

分 类 号：TN215[电子电信—物理电子学]