A Precise Model for Simulation of Temperature Distribution in Power Modules  

一种用于功率模块热分布特性研究的精确模型(英文)

作　　者：耿莉[1] 陈治明[1] R.Kruemmer T.Reimann J.Petzoldt 

机构地区：[1]西安理工大学应用电子学系 [2]Department of Electronics Technical University of Ilmenau

出　　处：《Journal of Semiconductors》2001年第5期548-553,共6页半导体学报（英文版）

摘　　要：The interaction between the active chips mounted and the same base plate is considered as a thermoelectrical coupling effect.An approach to coupling effect analysis of a multi-chip system is presented with IGBT as a sample.Finite element method is used to evaluate the temperature distribution in power modules.The precise electrothermal model is obtained by fitting the curve of transient thermal impedance with a finite series of exponential terms,in which,the thermal-coupling effect among chips is considered as a prediction of the highest transient temperature of the chips.This model can be used in many thermal monitoring systems.Both ANSYS and PSPICE si- mulation software have been employed,and the simulation results agree with the experimental ones very well.应用有限元法 ,对一个 IGBT功率模块的三维热分布进行了仿真研究 ,提出了通过 ANSYS仿真建立热模型的基本方法 ,进而探讨了功率模块上各芯片之间的热耦合关系 ,提出了考虑热耦合效应在内的功率模块热模型的统一结构 ,基于对瞬态热阻抗曲线的拟合 ,获得了热模型的相关参数 ,从而建立了热耦合模型 .该模型可方便地应用于电路仿真软件如 PSPICE中 ,仿真结果与有限元计算结果一致 ,并与实际测量值相符 .

关 键 词：power electronics IGBT module thermal simulation thermal coupling 

分 类 号：TN402[电子电信—微电子学与固体电子学]