GaNAs的声子拉曼散射研究  

PHONON-INDUCED RAMAN SCATTERING IN GaNAs'

作　　者：江德生[1] 孙宝权[1] 谭平恒[1] 李连 和潘钟 

机构地区：[1]中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083 [2]中国科学院半导体研究所光电子工艺中心,北京100083

出　　处：《红外与毫米波学报》2001年第1期11-14,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金! (编号 2 9890 2 17)&&

摘　　要：对分子束外延生长的 Ga NAs外延层进行了拉曼散射研究 ,观测到了由于导带中的 E+态所引起的共振散射和由此产生的布里渊区非Γ点声子的拉曼峰 .清晰地观测到了随氮含量增大 ,氮在 Ga As中的局域模振动演变为Ga NAs中的类 Ga N晶格声子带模 .通过样品在 850度快速热退火前后拉曼谱的对比 。The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancement of Raman scattering due to the E+ states in the conduction band was observed and the Raman peaks related to the phonons at non-Gamma points of the Brillouin Zone were detected. II was clearly seen that the local vibrational mode induced by nitrogen impurities evolves to the GaN-like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850 degreesC rapid thermal annealing, it was tentatively suggested that two weak peaks were induced by the pairing or clustering effect of nitrogen.

关 键 词：GaNAs 拉曼散射 局域模振动 分子束外延生长 带模振动 近红外光电子学 

分 类 号：TN304.26[电子电信—物理电子学] TN213