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作 者:王学忠[1] 蔡明[1] 陈辰嘉[1] 孙允希[1] 孙騊亨[1] 张毓英[1]
机构地区:[1]北京大学物理系,北京100871
出 处:《红外与毫米波学报》2001年第1期33-36,共4页Journal of Infrared and Millimeter Waves
基 金:国家自然科学基金! (编号 198740 0 5 )&&
摘 要:利用超高真空电子束蒸发技术在 Ga As(10 0 )上生长 Mn/ Sb多层膜 ,并经短时间热退火处理分别研究了其退火前后的磁性、磁光克尔效应及相应规律 .退火前 Mn/ Sb膜在室温下即具有较强的铁磁特性 ,其易磁化轴在膜面内 ,样品表面由密集的岛状铁磁颗粒组成 ,未能观测到纵向 (H∥平面 )克尔效应 .经 35 0℃、2 0 m in退火的样品显示了最大饱和磁化强度 Ms和最小矫顽力 H c,X射线衍射测量表明膜为 Mn Sb单晶并具有均匀的铁磁特性 ,能观测到显著的极向和纵向磁光克尔效应 。Mn/Sb multilayer films were grown on (100) GaAs substrate by an ultrahigh vacuum evaporation system and were annealed for a short time. The magnetic and magneto-optical properties were investigated for the samples unannealed and annealed, respectively. All unannealed Mn/Sb multilayer films exhibit strong ferromagnetic properties and the easy magnetization axes are in-plane. The surface of the samples consists of dense islands. The longitudinal (H // plane) Kerr effect was not observed for the unannealed samples. All samples annealed at 350 degreesC for 20min were found to be single phase with nickel arsenide (NiAs) crystal structure and have the largest saturation magnetization M-s and the lowest coercive force H-c. The magnetic force microscope image shows uniform ferromagnetic properties of the film. The longitudinal magneto-optical Kerr effect was observed. The observable Kerr effect hysteresis loop can be obtained for the annealed Mn/Sb multilayer films on GaAs.
关 键 词:铁磁性 磁光克尔效应 短时间退火 锰/锑多层膜 GAAS衬底 锰/锑铁磁膜
分 类 号:TN304[电子电信—物理电子学] O484.43[理学—固体物理]
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