GaInP/AlGaInP脊形波导激光器器件结构的优化研究  

Structure Optimization of GaInP/AlGaInP Ridge Waveguide Laser Diode

作　　者：高峰[1] 章燕申[1] 

机构地区：[1]清华大学精密仪器系,北京100084

出　　处：《半导体光电》2001年第2期90-92,共3页Semiconductor Optoelectronics

摘　　要：通过优化脊形波导的结构参数可以降低脊形波导激光器的阈值电流 ,提出了实现亚微米脊宽 ,从而降低阈值电流的方法。针对脊形波导制作过程中蚀刻深度不易控制的问题 。It is found that optimization of the structure parameters of ridge waveguide (RWG) can decrease the threshold current of RWG laser diode. The way to get the device with sub micron ridge width is proposed. In order to improve the controllability of the dry etching depth during the fabrication process of ridge waveguide, an etch stop layer is designed in the vertical structure of GaInP/AlGaInP ridge waveguide.

关 键 词：GAINP/ALGAINP 脊形波导 优化 激光器器件 结构 

分 类 号：TN365[电子电信—物理电子学] TN814