调制掺杂同型结对HB-LED工作电压的影响  

Effect of the Modulated Doping on the Work Voltage of HB-LED

作　　者：文尚胜[1] 范广涵[2] 廖常俊[2] 刘颂豪[2] 

机构地区：[1]华南理工大学应用物理系,广州510641 [2]华南师范大学MOCVD实验室,广州510631

出　　处：《量子电子学报》2001年第3期278-280,共3页Chinese Journal of Quantum Electronics

摘　　要：根据电化学 Ｃ－Ｖ测量 ＡｌＧａＩｎＰ外延片获得的载流子浓度深度分布数据，以及其 ＬＥＤ外延片封装后的工作电压，计算了其中Ｂ＋－Ｎ与Ｐ＋－Ｐ两种同型结的接触电势差，指出调制掺杂同型结的掺杂浓度分布是影响ＬＥＤ工作电压的另一大因素，并提出了进一步降低 ＬＥＤ工作电压的有效措施．Based on the results of AlGaInP LED samples measured by electro-chemical C-V profiler and their work voltages, we analyzed the contact-voltage difference from the homo-junctions, such as N+-N and P+-P junction, pointed out that the carrier density distribution of the modulated doping have a distinctive effect on the work voltage of HB-LED, and presented the method decreasing further HB-LED's work voltage.

关 键 词：调制掺杂 同型结 接触电势差 高亮度发光二极管 工作电压 

分 类 号：TN312.8[电子电信—物理电子学]