随机层厚分布的半导体超晶格光荧光对温度的依赖关系  

The Dependence of Photoluminescence on Temperature in GaAs/AlAs Superlattices with Random Layer Thicknesses

作　　者：陈效双[1] 窦红飞[1] 刘兴权[1] 陆卫[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家实验室,上海200083

出　　处：《量子电子学报》1999年第2期134-137,共4页Chinese Journal of Quantum Electronics

基　　金：国家博士后基金; 上海市科技启明星计划基金

摘　　要：本文提出热激活辐射过程和 Ｂｅｒｔｈｅｌｏｔ－型的非辐射复合过程互相竞争的简单模型解释无序半导体超晶格的光荧光防温度变化行为．预言了当温度升高荧光衰变时间在某一温度附近快速下降；获得了在高温时较大无序度的半导体超晶格比较小无序度的半导体超晶格荧光强，在低温时情况相反；且荧光峰随温度变化存在一个最大值．理论结果与实验观察到的无序半导体超晶格荧光行为一致．A simple model, involving the competition between an activated process and a Berthelot- type nonradiative process, is used to explain the temperature dependence of the photoluminescence (PL)behavior of disordered semiconductor superlattices. We predict that at 10K the PL decay time quickly decreases with increasing temperature. We also obtain that, at low temperature, the PL intensity of the disordered sedriconductor superlattice with less disordered degree is larger thanthat of the disordered semiconductor superlattice with larger disordered degree and at high temperature the case is on the contrary; the PL intensity has a maximum at a certain temperature. These results of the disordered semiconductor superlattice are in agreement with that observed by experiments.

关 键 词：温度 依赖关系 随机层厚分布 半导体超晶格 光荧光 

分 类 号：TN304[电子电信—物理电子学]