掺杂纳米硅薄膜中电子自旋共振研究  

INVESTIGATIONS INTO ELECTRON SPIN RESONANCE IN DOPED NANOCRYSTALLINE SILICON FILMS

作　　者：刘湘娜[1] 徐刚毅[2] 眭云霞[3] 何宇亮[1] 鲍希茂[1] 

机构地区：[1]南京大学物理系 [2]中国科学院上海冶金研究所信息功能材料国家重点实验室,上海200050 [3]南京大学现代分析中心,南京210093

出　　处：《物理学报》2001年第3期512-516,共5页Acta Physica Sinica

基　　金：国家自然科学基金!(批准号 :5 9832 10 0和E0 2 0 90 1)资助的课题

摘　　要：研究了掺杂纳米硅薄膜 (nc ∶Si∶H)中的电子自旋共振 (ESR)及与之相关的缺陷态 .样品是用等离子体增强化学气相沉积方法制成 ,为两相结构 ,即纳米晶粒镶嵌于非晶本体之中 .对掺磷的nc Si∶H样品 ,测量出其ESR信号的 g值为 1.9990— 1.9991,线宽ΔHpp为 (4 0— 42 )× 10 -4 T ,ESR密度Nss为 10 17cm-3 数量级 .对掺硼的nc Si∶H样品 ,其ESR信号的 g值为 2 .0 0 76— 2 .0 0 78,ΔHpp约为 18× 10 -4 T ,Nss为 10 16cm-3 数量级 .结合有关这种薄膜的微结构及导电等特性分析 ,对上述ESR来源 ,其线宽及密度等进行了解释 .认为掺磷的ESR信号来源于纳米晶粒 /非晶本体界面处高密度缺陷态上的未配对电子 ,而掺硼的ESR信号来源于非晶本体中aWe report here the studies of electron spin resonance (ESR) and its related defect states in doped nanocrystalline silicon films (nc-Si: H). The samples used, which was prepared by plasma enhanced CVD method, are of two phases in structure, i. e., nanocrystallites embedded in the amorphous matrix. For phosphorus doped nc-Si:H samples, the measured ESR g-values are 1.9990-1.9991, the line width DeltaH(pp)(40-42) x 10(-4) T, and the ESR density N-ss is of order of 10(17) cm(-3). For boron doped nc-Si: H samples, the measured ESR g-values are 2.0076-2.0078, DeltaH(pp) is about 18 x 10(-4) T, and N-ss is of order of 10(16) cm(-3). Considering the micro-structural and conducting characteristics of these kinds of-films, we discuss and give explanations to the ESR sources, their DeltaH(pp) and N-ss as well. We ascribe the ESR signals in phosphorus doped nc-Si:H to the unpaired electrons in the high density defect states located in the interfaces of nanocrystallites/amorphous matrix, and that in boron doped ones to the unpaired electrons in the valence band-tail states in the a-Si:H tissue of their amorphous matrix.

关 键 词：纳米硅薄膜 微结构 电子自旋共振 缺陷态 掺杂 

分 类 号：O484[理学—固体物理]