MSM光探测器的等效电路模型  

An Equivalent Circuit Model of a Metal-Semiconductor-Metal Photodetector

作　　者：武术[1] 林世鸣[1] 刘文楷[1] 

机构地区：[1]中国科学院半导体研究所,集成光电子国家重点实验室,北京100083

出　　处：《光电子．激光》2001年第6期552-555,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 (69896260 ;69937010)

摘　　要：本文详细介绍了一套完整的 In Ga As MSM光探测器的等效电路模型。模型包括暗电流、直流、交流、瞬态和噪声等特性的等效电路模型。每一部分均从经典的物理模型出发 ,结合实际情况设计构造 ,并将理论曲线与试验数据进行了比较 ,结果是令人满意的。WT5”BZ]:An comprehensive equivalent circuit model of the InGaAs (metal semiconductor metal) (MSM) photodetector has been built and is presented in this paper.Photocurrent and dark current in a MSM photodetector are analysized using the steady state continuity equations.The DC,AC and transient characteristics of the photodetector are presented.The model was simulated using PSPICE.The results were in good agreement with the experiment data. [WT5”HZ]

关 键 词：MSM光探测器 等效电路 INGAAS 

分 类 号：TN215[电子电信—物理电子学]