MOS场效应管压力微传感器  

MOS field effect transistor pressure microsensor

作　　者：颜黄苹[1] 冯勇建[1] 许金海[1] 卞剑涛[1] 

机构地区：[1]厦门大学机电工程系,福建厦门361005

出　　处：《传感器技术》2001年第5期19-21,共3页Journal of Transducer Technology

摘　　要：阐述了一种MOS场效应管 (MOSFET)压力微传感器的结构和基本工作原理。通过对该传感器的仿真实验 ,证明了MOSFET压力微传感器可通过简单的电压———电流转换原理 ,利用栅极电容的变化导致漏极电流与开启电压的变化而有效地测出作用于栅极膜片的压力的变化 ,具有较高的灵敏度与稳定性。The structure and basic working principle of a type of MOS field effect transistor pressure microsensor are presented. On the basis of simulation experiment, it proves that this microsensor can make use of the change of gate capacitance which leads to the change of drain current and threshold voltage to measure the change of pressure on the gate diaphragm effectively.This type of microsensor possesses higher sensitivity and higher stability.

关 键 词：微传感器 MOS场效应管 压力测量 

分 类 号：TP212.12[自动化与计算机技术—检测技术与自动化装置] TN386.1[自动化与计算机技术—控制科学与工程]