采用MEMS技术制造硅磁敏三极管  

Silicon megnetotran sistor by MEMS technology silicon transistor

作　　者：温殿忠[1] 穆长生[1] 赵晓峰[1] 

机构地区：[1]黑龙江大学敏感技术研究所,黑龙江哈尔滨150080

出　　处：《传感器技术》2001年第5期49-52,共4页Journal of Transducer Technology

基　　金：国家自然科学基金资助项目! (60 0 760 2 7)

摘　　要：阐述了采用MEMS技术与反外延技术相结合在硅片表面制造具有矩形板状立体结构的硅磁敏三极管的设计原理、结构和工艺。结果表明 ,设计的硅磁敏三极管制造技术不但能与IC工艺相兼容 ,而且便于集成化 ,将有广泛的应用领域。Adopt MEMS techniques and turn- extensing techniques make magnetic-sensitive silicon transistor in the face of the silicon is introduced,the magnetic-sensitive silicon transistor has rectangular structure.The design principle,device structure and technology are also introduced .The result shown technology of the sensor array is using silicon micromachining technology combined with semiconductor IC process and easy to integrated circuit block.The device will have a vast new world of application and dissemination.

关 键 词：MEMS技术 反外延技术 硅磁敏三极管 

分 类 号：TN32[电子电信—物理电子学]