BJMOSFET静态特性的解析模型及模拟分析  

Simulation and analysis of static characteristics for BJMOSFET'S analytical

作　　者：金湘亮[1] 曾云[1] 颜永红[1] 成世明[1] 龚磊[1] 盛霞[1] 樊卫[1] 

机构地区：[1]湖南大学应用物理系

出　　处：《功能材料与器件学报》2001年第2期167-170,182,共5页Journal of Functional Materials and Devices

摘　　要：建立了新型半导体功率器件—双极型压控晶体管（ BJMOSFET）的直流解析模型，通过提取模型参数，运用电路模拟软件 PSPICE的多瞬态分析法对 BJMOSFET的直流特性进行了模拟，分析得出这种新型器件在相同结构参数和同等外界条件下与传统 MOSFET相比， 电流密度提高 30％～40％。The DC analytical model has been built for the bipolar voltage control transistor which is a novel semiconductor power device. Appling the multiple－ transient of the PSPICE software, the DC characteristically graphs of BJMOSFET has been simulated. The results show that the current density of BJMOSFET is 30～ 40％ larger than that of power MOSFET under the same operating conditions and structure parameters.

关 键 词：BJMOSFET 静态特性 PSPICE 模拟分析 解析模型 

分 类 号：TN322.8[电子电信—物理电子学]