阴极弧等离子体沉积NbN薄膜  

Cathodic Arc Plasma Deposition of Niobium Nitride Films

作　　者：宋教花[1] 张涛[1] 侯君达[1] 邓志威 李永良 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]北京师范大学分析测试中心,北京100875

出　　处：《真空》2001年第1期28-31,共4页Vacuum

摘　　要：利用磁过滤等离子体沉积装置 ,结合金属等离子体沉积技术 ,在 Si基底上分别用动态离子束增强沉积和非增强沉积的方法来制备 Nb N膜 ,对二者予以比较 ,并探讨了非增强沉积过程中基底温度对 Nb N膜层的影响。温度升高使膜层中 N的含量先呈上升趋势 ,随后又稍微降低 ;温度升高促进晶粒生长 ,使晶粒尺寸变大 ,从室温到约 30 0℃的温度下得到的薄膜在 (2 2 0 )峰表现出很强的择优取向 ,5 0 0℃的沉积温度下 ,(2 2 0 )峰变的很弱 ,(2 0 0 )峰表现出择优取向 ,5 0 0℃时膜层中得到单一的 δ- Nb N相 ;表面形貌方面 ,温度越低 ,薄膜越不完整 ,在 5 0 0℃左右才能得到光滑完整的 Nb N膜。与非增强沉积相比 ,增强沉积不需加热 ,在低温下就能得到光滑致密的 Nb N膜 ,膜层中 N的含量更高 ,且没有明显的择优取向。NbN films were deposited on Si wafers wity two methods:a) cathodic arc deposition and b) cathodic arc deposition enhanced by dynamic plasma immersion ion implantation. The atomic frction of N in the coatings increases as the substrate temperature increases at first, and then decreases slightly. The grain size of δ NbN increases as the deposition temperature increases. From RT to 300℃,the δ NbN phase has a selected orientation of (220) . The film deposited at 500℃ has a selected orientation of (200). Smooth coatings could not be obtained until the substrate temperature increased to 500℃ with method a). Smooth and denser δ NbN coating was fabricated with method b) at low temperature. The film deposired with method b) has the highest atomic fraction of N. Selected orientation is not evident in this film.

关 键 词：等离子体沉积 动态离子束增强沉积 温度 氮化铌薄膜 硅 性能 制备 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]