长波长1.3μm InGaAsP/InP外腔主动锁模半导体激光器  

Active Mode-locking of 1.3μm InGaAsP/InP Semiconductor Laser Diode in An External Cavity

作　　者：邱昆 高以智[1] 周炳琨[1] 

机构地区：[1]清华大学电子工程系

出　　处：《激光与红外》1991年第5期54-56,共3页Laser & Infrared

摘　　要：利用外腔主动锁模技术,得到了9ps脉宽的1.3μm InGaAsP/InP半导体激光超短脉冲。在外腔中加入法珀标准具后,获得了可调谐变换极限的锁模脉冲。9ps ultrashort optical pulses of 1.3μm InGaAsP/InP semiconductor laser diode are produced by means of active mode-locking in an external cavity. Tunable bandwidth-limited mode-locking pulses are obtained when a Fabry-Perot etalon is employed in the external cavity.

关 键 词：半导体激光器 锁模 INGAASP/INP 

分 类 号：TN248.4[电子电信—物理电子学]