三聚噻吩的表面光电压谱研究  

Studies on the Surface Photovoltage Property of α-Terthiophene

作　　者：曹昌盛[1] 王策[1] 曹亚安[2] 史延慧[1] 李铁津 

机构地区：[1]吉林大学化学系,长春130023 [2]中国科学院化学研究所,北京100101

出　　处：《高等学校化学学报》2001年第6期1010-1012,共3页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金 !(批准号 :5 9870 0 9);国家攀登计划资助课题

摘　　要：采用表面光电压和电场诱导表面光电压技术研究了三聚噻吩在外电场作用下的电子运动行为 .结合三聚噻吩的 UV光谱、极化子概念以及前线轨道理论 ,指认了三聚噻吩能级跃迁性质 ,即 3 80 nm附近的峰为带 -带跃迁峰 ,4 47,4 65和 60 0 nm附近的峰是与单极化子有关的电子跃迁 ;而在 770和 90 0The behavior of the electron jumping of α terthiophene under effect of electrical field has been investigated by means of SPS and EFISPS. Combining the result of UV Vis spectra, the band band transition response peak(HOMO LUMO) has been assigned and non band band transition response peaks have also been assigned according to the conception of polaron. For the SPS and EFISPS of α 3T, near 380 nm, it is band band transition absorption. Near 447, 465 and 600 nm, three different types of electron transitions which are related to energy levels of mono polaron occured. Near 770 and 900 nm, other two types of electron transition which related to bipolaron occured.

关 键 词：三聚噻吩 极化子 表面光电压谱 电场诱导表面光电压 电子运动 电子跃迁 

分 类 号：O633.5[理学—高分子化学] O641.1[理学—化学]