STM热化学烧孔方式的信息存储——写入脉冲幅值和脉宽对信息点尺寸的影响  

STM Thermochemical Hole Burning Memory——Influence of Pulse Voltage and Duration on Hole Size

作　　者：雷晓钧[1,2] 陈海峰[1,2] 刘忠范[1,2] 

机构地区：[1]北京大学化学与分子工程学院 [2]北京大学纳米科学技术中心,北京100871

出　　处：《高等学校化学学报》2001年第7期1222-1224,共3页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金重大项目 (批准号 :6 9890 2 2 );国家自然科学基金 (批准号 :2 99730 0 1);国家杰出青年科学基金 (批准号 :5 942 5 0 0 6

摘　　要：Recently we reported STM THB(Thermochemical Hole Burning) Data Storage. Here we study the influence of pulse voltage and duration on hole size. It is demonstrated that with the increase of pulse voltage and duration, the hole size increases correspondingly. Furthermore, theoretical analysis was conducted, which was successfully used to interpret our experimental results.Recently we reported STM THB(Thermochemical Hole Burning) Data Storage. Here we study the influence of pulse voltage and duration on hole size. It is demonstrated that with the increase of pulse voltage and duration, the hole size increases correspondingly. Furthermore, theoretical analysis was conducted, which was successfully used to interpret our experimental results.

关 键 词：STM 信息存储 热化学成孔 电荷转移复合物 脉冲电压 写入脉冲幅值 信息点尺寸 脉宽 

分 类 号：TP333.4[自动化与计算机技术—计算机系统结构]