将1500nm InGaAsP BH外腔半导体激光器稳定到氨分子吸收谱线上  

Frequency Stabilization of 1500nm InGaAsP BH External Cavity Laser to Ammonia Absorption Line

作　　者：谢毅[1] 吴彝尊[1] 

机构地区：[1]北京邮电学院

出　　处：《计量学报》1991年第2期150-152,共3页Acta Metrologica Sinica

摘　　要：基于氨分子在近红外波段振转能级跃迁机制,作者将1500nm GRIN-ROD外腔InGaAsP BH激光器频率锁定到氨(NH_3)分子吸收谱线上,它的波长是1518.2nm。该系统长时间的频率漂移和抖动小于3MHz。Based on the vibration-rotation transitions of ammonia at the near infrared band,the frequency of a 1500nm InGaAsP BH GRIN-ROD external cavity laser is stabilized to the absorption line of ammonia.The wavelength of the locked point is 1518.2nm.The frequency fluctuation and drifts of the laser never exceed 3 MHz after being locked.

关 键 词：半导体 激光器 氨分子 谱线 锁定 

分 类 号：TN248.4[电子电信—物理电子学]