真空阴极电弧沉积碳氮膜的研究  

Studies of CN_x Films Grown by VCAD

作　　者：袁镇海[1] 付志强[1] 邓其森[1] 林松盛[1] 郑健红[1] 戴达煌[1] 

机构地区：[1]广州有色金属研究院,广州510651

出　　处：《真空科学与技术》2001年第4期329-331,共3页Vacuum Science and Technology

基　　金：广东自然科学基金项目 (95 0 734)

摘　　要：以氮气为反应气体 ,用真空阴极电弧沉积法沉积了CNx膜 ,并利用金相显微镜、Auger电子谱仪、FTIR及XRD对其进了分析。结果表明 :真空阴极电弧沉积法可以制备含N量高。CN x films were fabricated with nitrogen as reactive gas by vacuum cathodic arc deposition;The films were analyzed by optical microscope,Auger electron spectroscopy (AES),Fourier transform infrared spectroscopy(FTIR) and X ray diffraction (XRD).The results showed that the CN x film with high nitrogen content,C≡N and C—N bond and crystalline C 3N 4 can be fabricated by vacuum cathodic arc deposition.

关 键 词：真空阴极电弧沉积 氮气 碳氮膜 制备 结构 化学成分 

分 类 号：O484[理学—固体物理] TB43[理学—物理]