CdTe/CdMnTe多量子阱的生长和激子复合动力学性质的研究  

Epitaxial growth and exciton recombination properties of CdTe/Cd_（0.8）Mn_（0.2）Te quantum wells

作　　者：张希清[1] 梅增霞[1] 段宁[1] ZK Tang 

机构地区：[1]北方交通大学光电子技术研究所,北京100044 [2]香港科技大学物理系

出　　处：《功能材料》2001年第3期275-276,共2页Journal of Functional Materials

基　　金：国家自然科学基金;中国科学院激发态物理开放研究实验室基金赞助

摘　　要：用分子束外延在ＧｅＡｓ衬底上生长了 ＣｄＴｅ／Ｃｄ０．８Ｍｎ０．２多量子阱结构。利用Ｘ射线衍射（ＸＲＤ）、低激发密度下的ＰＬ光谱和变密度激发的 ｐｓ时间分辨光谱研究了 ＣｄＴｅ／ＣｄＭｎＴｅ多量子阱的结构和激子复合特性。在变密度激发的ｐｓ时间分辨光谱中，发现不同激发密度下发光衰减时间不同，认为它的机理可能是无辐射复合引起的。CdTe/Cd0.8 Mn0.2 Te quantum wells were grown by molecular beam epitaxy on substrate GaAs. The structure and exciton optical properties in CdSe/CdZnSe MQWs are investigated by means of XRD spectra, photoluminescence spectra with low excitation power 77 K and time-resolved photoluminescence spectra with different excitation power. The exciton emission linewidth is about 9nm at 77K. When weaker excitation was used, radiative recombination decay time of the exciton was reduced as the excitation intensity was decreased, the results indicated that the dominant mechanism may be quenching of exciton emission by impurities and defects.

关 键 词：CdTe/CdMnTe 量子阱 激子复合 动力学 半导体 

分 类 号：TN304.25[电子电信—物理电子学]